2SC1622A Datasheet, PDF (1/1 Pages) NEC – AUDIO FREQUENCY HIGH GAIN AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD

SMD Type
Transistors
Features
High DC current gain.
NPN Silicon Epitaxial Transistor
2SC1622A
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
120
V
VCEO
120
V
VEBO
5
V
IC
50
mA
PT
200
mW
Tj
150
Tstg
-55 to +150
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector-emitter saturation voltage *
Base-emitter voltage *
Gain bandwidth product
Output capacitance
* Pulse test: tp 350 ìs; d 0.02.
Symbol
Testconditons
ICBO VCB = 120V, IE=0
IEBO VEB = 5V, IC=0
VCE =6V , IC = 1mA
hFE
VCE =6V , IC = 0.1mA
VCE(sat) IC = 10mA , IB = 1mA
VBE VCE = 6V , IC = 1mA
fT VCE = 6V , IE = -1mA
Cob VCB = 30V , IE = 0 , f = 1.0MHz
hFE Classification
Marking
hFE
D15
135 270
D16
200 400
D17
300 600
D18
450 900
Min Typ Max Unit
0.05 ìA
0.05 ìA
135 500 900
100
0.07 0.30 V
0.55 0.58 0.65 V
50 110
MHz
1.6 2.5 pF
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