2SC1621 Datasheet, PDF (1/2 Pages) NEC – HIGH SPEED SWITCHING PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD

SMD Type
TransistIoCrs
NPN Silicon Epitaxial Transistor
2SC1621
Features
High speed : tstg=20ns MAX.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Total power dissipation
Junction temperature
Storage temperature range
Symbol
Rating
Unit
VCBO
40
V
VCEO
20
V
VEBO
5
V
IC
200
mA
PT
200
mW
Tj
150
Tstg
-55 to +150
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Gain bandwidth product
Output capacitance
Turn-on time
Storage time
Turn-off time
*. PW 350ìs,duty cycle 2%
Symbol
Testconditons
ICBO VCB = 30V, IE=0
IEBO VEB = 4V, IC=0
hFE VCE = 0.5V , IC = 1mA
VCE(sat) IC = 10mA , IB = 1mA
VBE(sat) IC = 10mA , IB = 1mA
fT VCE = 10V , IE = -10mA
Cob VCB = 10V , IE = 0 , f = 1.0MHz
ton
tstg See Test Circuit
toff
Min Typ Max Unit
100 nA
100 nA
40 80 180
0.13 0.25 V
0.74 0.85 V
200 500
MHz
3.0 6.0 pF
12 20 ns
7 20 ns
18 40 ns
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