2SB970 Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type(For low-voltage output amplification)

SMD Type
TransistIoCrs
Silicon PNP Epitaxial Planar Type
2SB970
Features
Low collector-emitter saturation voltage VCE(sat).
Mini type package,allowing downsizing of the equipment and automatic
insertion through the tape packing and the magazine packing.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
-15
V
VCEO
-10
V
VEBO
-7
V
IC
-.5
A
ICP
-1
A
PC
200
mW
Tj
150
Tstg
-55 to +150
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector-base cutoff current
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
* Pulse measurement.
hFE Classification
Marking
Rank
hFE
1R
R
S
130 220
180 350
Symbol
Testconditons
VCBO IC = -10 ìA, IE = 0
VCEO IC = -1 mA, IB = 0
VEBO IE = -10 ìA, IC = 0
ICBO VCB = -10 V, IE = 0
hFE VCE = -2 V, IC = -0.5A
VCE(sat) IC = -0.4 A, IB = -8 mA
VBE(sat) IC = -0.4 A, IB = -8 mA
fT VCB = -10 V, IE = 50 mA , f = 200 MHz
Cob VCB = -10V , IE = 0 , f = 1.0MHz
Min Typ Max Unit
-15
V
-10
V
-7
V
-100 nA
130
350
-0.16 -0.3 V
-0.8 -1.2 V
130
MHz
22
pF
www.kexin.com.cn ¹