2SB968_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SB968
Transistors
■ Features
● High collector to emitter VCEO
● Large collector power dissipation PC
● Complementary to 2SD1295
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30 +0.1
-0.1
0.50 +0.8
-0.7
0.80+0.1
-0.1
0.127
m ax
Unit: mm
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector current -Pulse
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
TJ
Tstg
2.3
4 .60 ^+0.15
-0.15
0.60+ 0.1
- 0.1
Rating
Unit
-50
-40
V
-5
-1.5
A
-3
20
W
150
℃
-55 to 150
1 Base
2 Collector
3 Emitter
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Collector- base breakdown voltage
VCBO Ic= -1 mA， IE=0
Collector- emitter breakdown voltage
VCEO Ic= -2 mA， IB=0
Emitter - base breakdown voltage
VEBO IE= -1 mA， IC=0
Collector-base cut-off current
ICBO VCB= -50V , IE=0
Collector-emitter cut-off current
ICEO VCE = –30V, IB = 0
Emitter cut-off current
IEBO VEB= -5V , IC=0
Collector-emitter saturation voltage
VCE(sat) IC=-1.5 A, IB=-150mA
Base - emitter saturation voltage
VBE(sat) IC=-2 A, IB=-200mA
DC current gain
hFE VCE= -5V, IC= -1 A
Collector output capacitance
Cob VCB = –20V, IE = 0, f = 1MHz
Transition frequency
fT
VCE= -5V, IC= -500mA,f=200MHz
Min Typ Max Unit
-50
-40
V
-5
-1
-100 uA
-10
-1
V
-1.5
50
220
45
pF
150
MHz
■ Classification of hfe
Type
Range
2SB968-P
50-100
2SB968-Q
80-160
2SB968-R
120-220
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