2SB967 Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type(For low-frequency power amplification)

SMD Type
Transistors
Silicon PNP Epitaxial Planar Type
2SB967
Features
Possible to solder the radiation fin directly to printed cicuit board.
Low collector-emitter saturation voltage VCE(sat).
Large collector current IC.
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
2.3
4.60^+0.15
-0.15
0.60+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
-27
V
VCEO
-18
V
VEBO
-7
V
IC
-5
A
ICP
-8
A
PC
20
W
Tj
150
Tstg
-55 to +150
1 Base
2 Collector
3 Emitter
Electrical Characteristics Ta = 25
Parameter
Collector-base cutoff curent
Emitter-base cutoff current
Collector-emitter voltage
Emitter-base voltage
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Testconditons
ICBO VCB = -10 V,IE = 0
IEBO VEB = -5 V, IC = 0
VCEO IC = -1mA, IB = 0
VEBO IE = -10 ìA, IC = 0
hFE VCE = -2 V, IC = 2 A
VCE(sat) IC = -3 A, IB = -0.1 A
fT VCE = -6 V, IE = -50 mA , f = 200 MHz
Cob VCB = -20V , IE = 0 , f = 1.0MHz
Min Typ Max Unit
-100 nA
-1 ìA
-18
V
-7
V
90
625
-1 V
120
MHz
85 pF
hFE Classification
Rank
hFE
P
90 135
Q
125 205
R
180 625
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