2SB962-Z_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SB962-Z
Transistors
■ Features
● Low collector to emitter saturation voltage VCE(sat).
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30 +0.1
-0.1
0.50 +0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
m ax
2.3
4 .60 ^+0.15
-0.15
0.60+ 0.1
- 0.1
1 Base
2 Collector
3 Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector current -Pulse
Collector Power Dissipation
Junction Temperature
Storage Temperature range
(Note.1)
Symbol
Rating
Unit
VCBO
-40
VCEO
-30
V
VEBO
-5
IC
-3
A
ICP
-6
PC
2
W
TJ
150
℃
Tstg
-55 to 150
Note.1: PW ≤ 10ms,Duty Cycle ≤ 50℅
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -100 μA， IE=0
VCEO Ic= -1 mA， IB=0
VEBO IE= -100μA， IC=0
ICBO VCB= -30V , IE=0
IEBO VEB= -4V , IC=0
VCE(sat) IC=-2 A, IB=-200mA (Note.1)
VBE(sat) IC=-2 A, IB=-200mA (Note.1)
hFE(1) VCE= -2V, IC= -20mA (Note.1)
hFE(2) VCE= -2V, IC= -1 A (Note.1)
Cob VCB = –10V, IE = 0, f = 1MHz
fT
VCE= -5V, IE= 100mA
Min Typ Max Unit
-40
-30
V
-5
-10
uA
-1
-0.3 -0.5
V
-1 -2
30 150
60 160 400
55
pF
80
MHz
Note.1: Pulsed: PW ≤ 350us,Duty Cycle≤ 2℅
■ Classification of hfe(2)
Type
Range
2SB962-Z-R
60-120
2SB962-Z-Q
100-200
2SB962-Z-P
160-320
2SB962-Z-E
200-400
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