2SB962-Z Datasheet, PDF (1/1 Pages) NEC – PNP SILICON EPITAXIAL TRANSISTOR MP-3

SMD Type
Transistors
PNP Silicon Epitaxial Transistor
2SB962-Z
Features
Low VCE(sat): VCE(sat)=-0.3V.
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector current pulse *
Total power dissipation
Junction temperature
Storage temperature range
* PW 10ms,duty cycle 50%.
2.3
4.60^+0.15
-0.15
0.60+0.1
-0.1
Symbol
Rating
Unit
VCBO
-40
V
VCEO
-30
V
VEBO
-5
V
IC
-3
A
ICP
-6
A
PT
2
W
Tj
150
Tstg
-55 to +150
1 Base
2 Collector
3 Emitter
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector saturation voltage *
Base saturation voltage *
Gain bandwidth product
Output capacitance
* Pulsed: PW 350 µs, duty cycle 2%
Symbol
Testconditons
ICBO VCB = -30 V, IE = 0
IEBO VEB = -3.0 V, IC = 0
VCE = -2.0 V, IC = -1A
hFE
VCE = -2.0 V, IC =-20mA
VCE(sat) IC = -2A, IB = -0.2A
VBE(sat) IC = -2A, IB = -0.2A
fT VCE = -5.0 V, IE = 100mA
Cob VCB = -10 V, IE = 0 , f = 1.0 MHz
Min Typ Max Unit
-10 µA
-1 µA
60 160 400
30 150
-0.3 -0.5 V
-1 -2
V
80
MHz
55
pF
hFE Classification
Rank
hFE
R
60 120
Q
100 200
P
160 320
E
200 400
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