2SB956 Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type(For low-frequency power amplification)

SMD Type
Transistors
Silicon PNP Epitaxial Planar Type
2SB956
Features
Large collector power dissipation PC
Low collector-emitter saturation voltage VCE(sat)
Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the magazine
packing.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
-20
V
VCEO
-20
V
VEBO
-5
V
IC
-1
A
ICP
-2
A
PC
1
mW
Tj
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Collector-base voltage
Emitter-base voltage
Collector-base cutoff current
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
* Pulse measurement.
3
Symbol
Testconditons
VCBO IC = -1 mA, IB = 0
VEBO IE = -10 ìA, IC = 0
ICBO VCB = -10 V, IE = 0
hFE VCE = -2 V, IC = -500 mA
VCE(sat) IC = -1 A, IB = -50 mA
VBE(sat) IC = -500 mA, IB = -50 mA
fT VCB = -6 V, IE = 50 mA, f = 200 MHz
Cob VCB = -6 V, IE = 0, f = 1 MHz
Min Typ Max Unit
-20
V
-5
V
-1 nA
130
280
-0.5 V
-1.2 V
200
MHz
40
pF
hFE Classification
Marking
hFE
HR
130 210
HS
180 280
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