2SB956-HF_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SB956-HF
Transistors
■ Features
● Large collector power dissipation PC.
● Low collector to emitter saturation voltage VCE(sat).
● Complementary to 2SD1280-HF
● Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
1.70 0.1
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector current -Pulse
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
Rating
Unit
VCBO
-20
VCEO
-20
V
VEBO
-5
IC
-1
A
ICP
-2
PC
1
W
TJ
150
℃
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -100 μA， IE=0
VCEO Ic= -1 mA， IB=0
VEBO IE= -100μA， IC=0
ICBO VCB= -20V , IE=0
IEBO VEB= -5V , IC=0
VCE(sat) IC=-1 A, IB=-50mA
VBE(sat) IC=-500 mA, IB=-50mA
hFE(1) VCE= -2V, IC= -500mA
hFE(2) VCE= -2V, IC= -1.5 A
Cob VCB = –6V, IE = 0, f = 1MHz
fT VCE= -6V, IE= 50mA,f=200MHz
Min Typ Max Unit
-20
-20
V
-5
-1
uA
-1
-0.5
V
-1.2
130
280
50
40
pF
200
MHz
■ Classification of hfe(1)
Type
2SB956-R-HF 2SB956-S-HF
Range
130-210
180-280
Marking
HR F
HS F
www.kexin.com.cn ¹