2SB936A_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
Transistors
PNP Transistors
2SB936A
■ Features
● Low collector to emitter saturation voltage VCE(sat)
● High-speed switching
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30 +0.1
-0.1
0.50 +0.8
-0.7
0.80+0.1
-0.1
0.127
m ax
Unit: mm
■ Absolute Maximum Ratings Ta = 25℃
2.3
4 .60 ^+0.15
-0.15
0.60+ 0.1
- 0.1
1 Base
2 Collector
3 Emitter
Parameter
Symbol
Rating
Unit
Collector - Base Voltage
VCBO
-50
Collector - Emitter Voltage
VCEO
-40
V
Emitter - Base Voltage
VEBO
-5
Collector Current - Continuous
Collector current - Pulse
IC
-10
A
ICP
-20
Collector Power Dissipation
Tc = 25°C
40
PC
W
Ta = 25°C
1.3
Junction Temperature
Storage Temperature range
TJ
150
℃
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector- base breakdown voltage
VCBO Ic= -100 μA， IE=0
-50
Collector- emitter breakdown voltage
VCEO Ic= -10 mA， IB=0
-40
V
Emitter - base breakdown voltage
VEBO IE= -100μA， IC=0
-5
Collector-base cut-off current
Emitter cut-off current
ICBO
IEBO
VCB= -50V , IE=0
VEB= -5V , IC=0
-50
uA
-50
Collector-emitter saturation voltage
Base - emitter saturation voltage
VCE(sat) IC=-10 A, IB=-330mA
VBE(sat) IC=-10 A, IB=-330mA
-0.6
V
-1.5
DC current gain
hFE(1)
hFE(2)
VCE= -2V, IC= -100mA
VCE= -2V, IC= -3 A
45
90
260
Turn-on time
ton
0.1
Storage time
tstg IC = – 3A, IB1 = –100mA, IB2 = 100mA
0.5
us
Fall time
tf
0.1
Collector output capacitance
Cob VCB = –10V, IE = 0, f = 1MHz
400
pF
Transition frequency
fT VCE= -10V, IC= -500mA,f=10MHz
100
MHz
■ Classification of hfe(2)
Type
2SB936A-Q 2SB936A-P
Range
90-180
130-260
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