2SB931_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SB931
Transistors
■ Features
● Low collector to emitter saturation voltage VCE(sat)
● Satisfactory linearity of foward current transfer ratio hFE
● Large collector current IC
● Complementary to 2SD1254
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30 +0.1
-0.1
0.50 +0.8
-0.7
0.80+0.1
-0.1
0.127
m ax
Unit: mm
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector current - Pulse
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Tc = 25°C
Ta = 25°C
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
TJ
Tstg
2.3
4 .60 ^+0.15
-0.15
0.60+ 0.1
- 0.1
Rating
Unit
-130
-80
V
-7
-3
A
-6
30
W
1.3
150
℃
-55 to 150
1 Base
2 Collector
3 Emitter
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Turn-on time
Storage time
Fall time
Transition frequency
■ Classification of hfe(2)
Symbol
Test Conditions
Min Typ Max Unit
VCBO Ic= -100 μA， IE=0
-130
VCEO Ic= -10 mA， IB=0
-80
V
VEBO IE= -100μA， IC=0
-7
ICBO
IEBO
VCB= -100V , IE=0
VEB= -5V , IC=0
-10
uA
-50
VCE(sat) IC=-2 A, IB=-100mA
VBE(sat) IC=-2 A, IB=-100mA
-0.5
V
-1.5
hFE(1) VCE= -2V, IC= -100mA
45
hFE(2) VCE= -2V, IC= -500mA
90
260
ton
0.3
tstg IC = – 0.5A,IB1 = –50mA, IB2 = 50mA
1.1
us
tf
0.3
fT
VCE= -10V, IC= -500mA,f=10MHz
30
MHz
Type
2SB931-Q
2SB931-P
Range
90-180
130-260
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