2SB930A_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
Transistors
PNP Transistors
2SB930A
■ Features
● High forward current transfer ratio hFE
which has satisfactory linearity
● Low collector to emitter saturation voltage VCE(sat)
● Complementary to 2SD1253A
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30 +0.1
-0.1
0.50 +0.8
-0.7
0.80+0.1
-0.1
0.127
m ax
Unit: mm
2.3
4 .60 ^+0.15
-0.15
0.60+ 0.1
- 0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector current - Pulse
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Tc = 25°C
Ta = 25°C
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
TJ
Tstg
Rati g
-80
-80
-5
-4
-8
40
1.3
150
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Collector- base breakdown voltage
VCBO
Collector- emitter breakdown voltage
VCEO
Emitter - base breakdown voltage
VEBO
Collector-base cut-off current
ICBO
Collector cutoff current
ICES
Collector cutoff current
ICEO
Emitter cut-off current
IEBO
Collector-emitter saturation voltage
VCE(sat)
Base - emitter saturation voltage
VBE(sat)
Base - emitter voltage
VBE
DC current gain
hFE(1)
hFE(2)
Turn-on time
ton
Storage time
tstg
Fall time
tf
Transition frequency
fT
Test Conditions
Ic= -100 μA， IE=0
Ic= -30 mA， IB=0
IE= -100μA， IC=0
VCB= -80V , IE=0
VCE= -80V ,VBE=0
VCE= -60V ,IB=0
VEB= -5V , IC=0
IC=-4 A, IB=-400mA
IC=-4 A, IB=-400mA
VCE= -4 V, IC= -3 A
VCE= -4 V, IC= -1 A
VCE= -4 V, IC= -3 A
IC = –4A, IB1 = – 0.4A, IB2 = 0.4A
VCE= -10V, IC= -100mA,f=1MHz
■ Classification of hfe(1)
Type
2SB930A-Q
Range
70-150
2SB930A-P
120-250
Unit
V
A
W
℃
Min
-80
-80
-5
70
15
1 Base
2 Collector
3 Emitter
Typ Max Unit
V
-0.1 mA
-400
uA
-700
-0.1 mA
-1.5
-1.2 V
-2
250
0.2
0.5
us
0.2
20
MHz
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