2SB929_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
Transistors
PNP Transistors
2SB929
■ Features
● High forward current transfer ratio hFE
which has satisfactory linearity
● Low collector to emitter saturation voltage VCE(sat)
● Complementary to 2SD1252
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30 +0.1
-0.1
0.50 +0.8
-0.7
0.80+0.1
-0.1
0.127
m ax
Unit: mm
■ Absolute Maximum Ratings Ta = 25℃
2.3
4 .60 ^+0.15
-0.15
0.60+ 0.1
- 0.1
1 Base
2 Collector
3 Emitter
Parameter
Symbol
Rating
Unit
Collector - Base Voltage
VCBO
-60
Collector - Emitter Voltage
VCEO
-60
V
Emitter - Base Voltage
VEBO
-5
Collector Current - Continuous
Collector current - Pulse
IC
-3
A
ICP
-5
Collector Power Dissipation
Tc = 25°C
35
PC
W
Ta = 25°C
1.3
Junction Temperature
Storage Temperature range
TJ
150
℃
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Collector- base breakdown voltage
VCBO
Collector- emitter breakdown voltage
VCEO
Emitter - base breakdown voltage
VEBO
Collector-base cut-off current
ICBO
Collector cutoff current
ICES
Collector cutoff current
ICEO
Emitter cut-off current
IEBO
Collector-emitter saturation voltage
VCE(sat)
Base - emitter saturation voltage
VBE(sat)
Base - emitter voltage
VBE
DC current gain
hFE(1)
hFE(2)
Turn-on time
ton
Storage time
tstg
Fall time
tf
Transition frequency
fT
■ Classification of hfe(1)
Type
2SB929-Q
2SB929-P
Test Conditions
Ic= -100 μA， IE=0
Ic= -30 mA， IB=0
IE= -100μA， IC=0
VCB= -60V , IE=0
VCE= -60V ,VBE=0
VCE= -30V ,IB=0
VEB= -4V , IC=0
IC=-3 A, IB=-375mA
IC=-3 A, IB=-375mA
VCE= -4 V, IC= -3 A
VCE= -4 V, IC= -1 A
VCE= -4 V, IC= -3 A
IC = –1A, IB1 = – 0.1A, IB2 = 0.1A
VCE= -10V, IC= -500mA,f=10MHz
Range
70-150
120-250
Min Typ Max Unit
-60
-60
V
-5
-0.1 mA
-200
uA
-300
-0.1 mA
-1.2
-1.2 V
-1.8
70
250
10
0.5
1.2
us
0.3
30
MHz
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