2SB906_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
Transistors
PNP Transistors
2SB906
■ Features
● Low collector saturation voltage
● High power dissipation: PC = 20 W (Tc = 25°C)
● Complementary to 2SD1221
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30 +0.1
-0.1
0.50 +0.8
-0.7
0.80+0.1
-0.1
0.127
m ax
Unit: mm
2.3
4 .60 ^+0.15
-0.15
0.60+ 0.1
- 0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Base Current
Collector Power Dissipation
Ta = 25°C
Tc = 25°C
Junction Temperature
Storage Temperature range
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base - emitter voltage
DC current gain
Turn-on time
Storage time
Fall time
Collector output capacitance
Transition frequency
■ Classification of hfe(1)
Type
2SB906-O
Range
60-120
2SB906-O
100-200
Symbol
Rating
Unit
VCBO
-60
VCEO
-60
V
VEBO
-7
IC
-3
A
IB
-0.5
1
PC
W
20
TJ
150
℃
Tstg
-55 to 150
Symbol
Test Conditions
VCBO Ic= -100 μA， IE=0
VCEO Ic= -50 mA， IB=0
VEBO IE= -100μA， IC=0
ICBO VCB= -60V , IE=0
IEBO VEB= -7V , IC=0
VCE(sat) IC=-3 A, IB=-300mA
VBE(sat) IC=-3 A, IB=-300mA
VBE VCE= -5V, IC= -500mA
hFE(1) VCE= -5V, IC= -500mA
hFE(2) VCE=- 5V, IC= -3A
ton
tstg
See specified Test Circuit
tf
Cob VCB= -10V, IE= 0,f=1MHz
fT
VCE= -5V, IC= -500mA
1 Base
2 Collector
3 Emitter
Min Typ Max Unit
-60
-60
V
-7
-100
nA
-100
-1 -1.7
-1.2 V
-1 -1.5
60
200
20
0.4
1.7
us
0.5
90
pF
9
MHz
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