2SB906 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – TRANSISTOR (AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS)

SMD Type
Silicon PNP Epitaxial
2SB906
Transistors
Features
Low collector saturation voltage.
High power dissipation.
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Electrical Characteristics Ta = 25
Parameter
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
hFE Classification
Rank
hFE
O
60 120
Y
100 200
2.3
4.60^+0.15
-0.15
0.60+0.1
-0.1
Symbol
Rating
Unit
VCBO
-60
V
VCEO
-60
V
VEBO
-7
V
IC
-3
mA
IB
-0.5
mA
PC
1
mW
Tj
150
Tstg
-55 to +150
1 Base
2 Collector
3 Emitter
Symbol
Testconditons
Min Typ Max Unit
ICBO VCB = -60 V, IE = 0
-100 ìA
IEBO VEB = -7 V, IC = 0
-100 ìA
V(BR)CEO IC=-50mA, IB=0
-60
V
VCE = -5 V, IC = -0.5 A
hFE
VCE = -5 V, IC = -3 A
60
200
20
VCE (sat) IC = -3 A, IB = -0.3 A
-1 -1.7 V
VBE VCE = -5V, IC =-0.5 A
-1 -1.5 V
fT VCE = -5V, IC =-0.5 A
9
MHz
Cob VCB = -10V, IE = 0, f = 1 MHz
150
pF
ton
0.4
ìs
tstg -IB1=IB2=0.2A,VCC=-30V,duty cycle1%
1.7
ìs
tf
0.5
ìs
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