2SB815_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SB815
Transistors
■ Features
● Large current capacity (IC=0.7A) and low-saturation voltage.
● Complimentary to 2SD1048.
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.1
Unit: mm
0.1 ^+0.05
-0.01
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
Rating
Unit
VCBO
-20
VCEO
-15
V
VEBO
-5
IC
-700
mA
ICP
-1.5
A
PC
200
mW
TJ
125
℃
Tstg
-55 to 125
1.Base
2.Emitter
3.collector
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -100 μA， IE=0
VCEO Ic= -1 mA， IB=0
VEBO IE= -100μA， IC=0
ICBO VCB= - 15V , IE=0
IEBO VEB= -4V , IC=0
IC=-5 mA, IB=-0.5mA
VCE(sat)
IC=-100mA, IB=-10mA
VBE(sat) IC=-100mA, IB=-10mA
VCE= -2V, IC= -50mA
hFE
VCE= -2V, IC= -500mA
Cob VCB= -10V, IE= 0,f=1MHz
fT
VCE= -10V, IC= -50mA
Min Typ Max Unit
-20
-15
V
-5
-0.1
uA
-0.1
-15 -35
mV
-60 -120
-1.2 V
200
600
80
13
pF
250
MHz
■ Classification of hfe(1)
Type
2SB815-B6
Range
200-400
Marking
B6
2SB815-B7
300-600
B7
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