2SB815 Datasheet, PDF (1/1 Pages) Sanyo Semicon Device – For General-Purpose AF Amplifier

SMD Type
TransistIoCrs
PNP Epitaxial Planar Silicon Transistors
2SB815
Features
Ultrasmall package allows miniaturization in end products.
Large current capacity (IC=0.7A) and low-saturation voltage.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse)
Collector dissipation
Jumction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
-20
V
VCEO
-15
V
VEBO
-5
V
IC
-0.7
A
ICP
-1.5
A
PC
200
mW
Tj
125
Tstg
-55 to +125
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current Gain
Gain bandwidth product
Output capacitance
Collector-emitter saturation voltage
Symbol
Testconditons
IcBO VCB = -15V , IE = 0
IEBO VEB = -4V , IC = 0
hFE VCE = -2V , IC = -50mA
fT VCE = -10V , IC = -50mA
Cob VCB = -10V , f = 1MHz
VCE(sat) IC = -5mA , IB = -0.5mA
VCE(sat) IC = -100mA , IB = -10mA
1.Base
2.Emitter
3.collector
Min Typ Max Unit
-0.1 ìA
-0.1 ìA
200
600
250
MHz
13
pF
-15 -35 mV
-60 -120 mV
hFE Classification
Marking
hFE
B6
200 400
B7
300 600
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