2SB806-HF_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

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PNP Transistors
2SB806-HF
Transistors
■ FCelastusrifeicsation of hfe(1)
● High collector to emitter voltage: VCEO = -120V.
● Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
1.70 0.1
0.42 0.1
0.46 0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse) *1
Collector power dissipation
Junction temperature
Storage temperature
*1. PW≤10ms,duty cycle≤50%
■ Electrical Characteristics Ta = 25℃
Symbol
VCBO
VCEO
VEBO
IC
IC(pu)
Pc
Tj
Tstg
Rating
-120
-120
-5
-0.7
-1.2
2
150
-55 to +150
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage *
Base - emitter saturation voltage *
Base - emitter voltage *
DC current gain *
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -100 μA， IE= 0
VCEO Ic=- 1 mA， IB= 0
VEBO IE= -100μA， IC= 0
ICBO VCB= -120 V , IE= 0
IEBO VEB= -5V , IC=0
VCE(sat) IC=-500 mA, IB=-50mA
VBE(sat) IC=-500 mA, IB=-50mA
VBE VCE= -10V, IC= -10mA
VCE= -1V, IC= -100mA
hFE
VCE= -1V, IC= -5mA
Cob VCB= -10V, IE=0,f=1MHz
fT
VCE= -10V, IC= -10mA
* PW≤350µs,duty cycle≤2%
■ EhlFeEctCriclaaslsCifhicaartaiocnte(1ri)stics Ta
Type
2SB806-R-HF 2S⁼B8²0⁵6^℃-Q-HF
Range
90-180
135-270
Marking
KR F
KQ F
2SB806-P-HF
200-400
KP F
1.Base
2.Collector
3.Emitter
Unit
V
V
V
A
A
W
℃
℃
Min Typ Max Unit
-120
-120
V
-5
-0.1
uA
-0.1
-0.6
-1.5 V
-0.55
-0.68
90 200 400
45 200
14
pF
75
MHz
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