2SB800 Datasheet, PDF (1/1 Pages) NEC – PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

SMD Type
Transistors
PNP Silicon Epitaxial Transistor
2SB800
Features
World standard miniature package:SOT-89
High collector to emitter voltage:VCEO -80V
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector current(Pulse) *
Total power dissipation
Junction temperature
Storage temperature range
* PW 10ms,duty cycle 50%.
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector saturation voltage *
Base saturation voltage *
Base-emitter voltage *
Gain bandwidth product
Output capacitance
* Pulsed: PW 350 ìs, duty cycle 2%
Symbol
Rating
Unit
VCBO
-80
V
VCEO
-80
V
VEBO
-5
V
IC
-300
mA
IC
-500
mA
PT
2.0
W
Tj
150
Tstg
-55 to +150
Symbol
Testconditons
ICBO VCB = -80 V, IE = 0
IEBO VEB = -5.0 V, IC = 0
VCE = -1.0 V, IC = -50 mA
hFE
VCE = -2.0 V, IC = -300 mA
VCE(sat) IC = -300mA, IB = -30mA
VBE(sat) IC = -300mA, IB = -30mA
VBE VCE = -6.0 V, IC = -10 mA
fT VCE = -6.0 V, IE = 10 mA
Cob VCB = -6.0 V, IE = 0 , f = 1.0 MHz
hFE Classification
Marking
hFE
FM
90 180
FL
135 270
FK
200 400
Min
90
30
-600
Typ
200
80
-0.3
-0.9
-660
100
13
Max
-100
-100
400
-0.6
-1.2
-700
Unit
nA
nA
V
V
mV
MHz
pF
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