2SB799-HF_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SB799-HF
Transistors
■ Features
● Low Collector Saturation Voltage:
VCE(sat)< -0.4V (Ic = -500mA, IB = -50mA )
● Complement to 2SD1000-HF
● Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
1.70 0.1
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse (Note.1)
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
Rating
Unit
VCBO
-60
VCEO
-50
V
VEBO
-5
IC
-0.7
A
ICP
-1
PC
2
W
TJ
150
℃
Tstg
-55 to 150
Note.1: PW≦10ms,Duty Cycle≦50%
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Collector- base breakdown voltage
VCBO Ic= -100 μA， IE=0
Collector- emitter breakdown voltage
VCEO Ic= -1 mA， IB=0
Emitter - base breakdown voltage
VEBO IE= -100μA， IC=0
Collector-base cut-off current
ICBO VCB= -60 V , IE=0
Emitter cut-off current
IEBO VEB= -5V , IC=0
Collector-emitter saturation voltage (Note.1) VCE(sat) IC=-500mA, IB=-50mA
Base - emitter saturation voltage (Note.1) VBE(sat) IC=-500mA, IB=-50mA
Base - emitter voltage (Note.1)
VBE VCE= -6V, IC= -10mA
DC current gain (Note.1)
VCE= -1V, IC= -100mA
hFE
VCE= -1V, IC= -500mA
Collector output capacitance
Cob VCB= -6V, IE= 0 mA,f=1MHz
Transition frequency
fT
VCE= -6V, IE= 10mA
Note.1:Pulse test : Pulse width ≤350μs,Duty Cycle≤2%.
■ Classification of hfe(1)
Min Typ Max
-60
-50
-5
-0.1
-0.1
-0.16 -0.4
-0.9 -1.2
-600 -630 -700
90 200 400
50 120
25
120
Unit
V
uA
V
mV
pF
MHz
Type
Range
Marking
2SB799-M-HF
90-180
MM F
2SB799-L-HF
135-270
ML F
2SB799-K-HF
200-400
MK F
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