2SB772A_15 Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SB772A
Transistors
■ Features
● PNP transistor High current output up to 3A
● Low Saturation Voltage
● Complement to 2SD882A
1.70 0.1
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current to Continuous
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
Rating
Unit
VCBO
-70
V
VCEO
-60
V
VEBO
-6
V
IC
-3
A
Pc
0.5
W
TJ
150
℃
Tstg
-55 to 150
℃
■ Electrical Characteristics Ta = 25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
VCBO
VCEO
VEBO
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
f_T
Test Conditions
Ic=-100uA ,IE=0
IC= -10 mA , IB=0
IE= -100 uA ,IC=0
VCB=-70 V , IE=0
VEB=-6V , IC=0
VCE= -2V, IC= -1A
VCE=-2V, IC= -100mA
IC=-2A, IB=- 0.2A
IC=-2A, IB= -0.2A
VCE=-5 V, IC=-0.1mA,f = 10MHz
Min Typ Max Unit
-70
V
-60
V
-6
V
-1 μA
-1 μA
60
400
32
-0.5 V
-1.5 V
50
MHz
■ Classification of hfe(1)
Type
Range
Marking
2SB772A-R
60-120
772AR
2SB772A-Q
100-200
772AQ
2SB772A-P
160-320
772AP
2SB772A-E
200-400
772AE
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