2SB772 Datasheet, PDF (1/1 Pages) NEC – PNP SILICON POWER TRANSISTOR

SMD Type
PNP Silicon Power Transistor
2SB772
Transistors
Features
Low saturation voltage.
VCE(sat) -0.5(@ IC=-2A,IB=-0.2A)
Excellent hFE
hFE: 60 to 400 (@VCE=-2V,IC=-1A)
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector Power dissipation TA = 25
TC = 25
Junction temperature
Storage temperature range
Symbol
Rating
Unit
VCBO
-40
V
VCEO
-30
V
VEBO
-5
V
IC
-3
A
1.0
W
Pc
10
W
Tj
150
Tstg
-55 to +150
* PW 350ìS,duty cycle 2%.
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector saturation voltage *
Base saturation voltage *
Output capacitance
Transition frequency
* Pulsed: PW 350 s, duty cycle 2%
Symbol
Testconditons
VCBO Ic=-100 A,IE=0
VCEO IC= -10 mA , IB=0
VEBO IE= -100 A IC=0
ICBO VCB = -30 V, IE = 0
IEBO VEB = -6V, IC = 0
hFE VCE = -2.0 V, IC = -1.0A *
VCE(sat) IC = -2A, IB = -0.2A
VBE(sat) IC = -2A, IB = -0.2A
Cob VCB = -10 V, IE = 0,f=1.0MHz
fT VCE = -5.0 V, IE = -0.1A,f=10MHz
hFE Classification
Rank
hFE
R
60 120
Q
100 200
P
160 320
E
200 400
Min Typ Max Unit
-40
V
-30
V
-5
V
-1.0
A
-1.0
A
60 160 400
-0.3 -0.5 V
-1.0 -2.0 V
55
pF
80
MHz
www.kexin.com.cn ¹