2SB772-126_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

DIP Type
Transistors
PNP Transistors
2SB772
■ Features
● PNP transistor High current output up to 3A
● Low Saturation Voltage
● Complement to 2SD882
TO-126
8.00± 0.30
ø3.20± 0.10
0.75± 0.10
1.60± 0.10
0.75± 0.10
12 3
#1
2.28TYP
[2.28±0.20]
2.28TYP
[2.28±0.20]
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current to Continuous
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
Rating
Unit
VCBO
-40
V
VCEO
-30
V
VEBO
-6
V
IC
-3
A
Pc
1
W
TJ
150
℃
Tstg
-55 to 150
℃
Unit:mm
3.25± 0.20
(1.00)
(0.50)
1.75± 0.20
0.50
+0.10
–0.05
1. Base
2. Collector
3. Emitter
■ Electrical Characteristics Ta = 25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
VCBO
VCEO
VEBO
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
f_T
Test Conditions
Ic=-100uA ,IE=0
IC= -10 mA , IB=0
IE= -100 uA ,IC=0
VCB=-40 V , IE=0
VEB=-6V , IC=0
VCE= -2V, IC= -1A
VCE=-2V, IC= -100mA
IC=-2A, IB=- 0.2A
IC=-2A, IB= -0.2A
VCE=-5 V, IC=-0.1mA,f = 10MHz
■ Classification of hfe(1)
Type
Range
2SB772-R
60-120
2SB772-Q
100-200
2SB772-P
160-320
2SB772-E
200-400
Min Typ Max Unit
-40
V
-30
V
-6
V
-1 μA
-1 μA
60
400
32
-0.5 V
-1.5 V
50
MHz
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