2SB768 Datasheet, PDF (1/1 Pages) NEC – PNP SILICON TRIPLE DIFFUSED TRANSISTOR MP-3

SMD Type
Silicon PNP Transistor
2SB768
Transistors
Features
High Voltage:VCBO=-150V
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
2.3
4.60^+0.15
-0.15
0.60+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-to-Base Voltage
VCBO
-200
V
Collector-to-Emitter Voltage
VCEO
-150
V
Emitter-to-Base Voltage
VEBO
-5
V
Collector Current
IC
-2
A
Collector Current (Pulse) *1
ICP
-3
A
Total Power Dissipation *2 Ta=25
PT
2
W
Junction Temperature
Tj
150
Storage Temperature
Tstg
-55 to 150
*1 PW 10ms,.Duty Cycle 50%
*2 when mounted on ceramic substrate of 7.5cm² X 0.7mm
1 Base
2 Collector
3 Emitter
Electrical Characteristics Ta = 25
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain *
Collector-to-Emitter Saturation Voltage *
Gain Badnwidth Product
* Pulsed :pw 350ìs,Duty Cycle 2%
Symbol
ICBO
IEBO
hFE
VCE(sat)
fT
Testconditons
VCB=-150V, IE=0
VEB=-4V, IC=0
VCE=-10V, IC=-0.4A
IC=-500mA, IB=-50mA
VCE=-10V,IE=-0.4mA
hFE Classification
Marking
hFE
M
40 to 80
L
60 to 120
K
100 to 200
Min Typ Max Unit
-50 ìA
-50 ìA
40 80 200
-0.15 -1.0 V
10
MHz
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