2SB767_15 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – PNP Transistors

SMD Type
PNP Transistors
2SB767
Transistors
■ Features
● Large collector power dissipation PC
● High collector to emitter voltage VCEO.
● Complimentary to 2SD875 .
1.70 0.1
0.42 0.1
0.46 0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
Collector Power Dissipation
Junction Temperature
Storage Temperature range
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
■ Classification of hfe(1)
Type
Range
Marking
2SB767-Q
90-155
CQ
2SB767-R
130-220
CR
Symbol
Rating
Unit
VCBO
-80
VCEO
-80
V
VEBO
-5
IC
-0.5
A
ICP
-1
PC
1
W
TJ
150
℃
Tstg
-55 to 150
Symbol
Test Conditions
VCBO Ic= -100 μA， IE=0
VCEO Ic= -1 mA， IB=0
VEBO IE= -100μA， IC=0
ICBO VCB= -60 V , IE=0
IEBO VEB= -4V , IC=0
VCE(sat) IC=-300 mA, IB=-30mA
VBE(sat) IC=-300 mA, IB=-30mA
hFE(1) VCE= -10V, IC= -150mA
hFE(2) VCE=- 5V, IC= -500mA
Cob VCB= -10V, IE= 0,f=1MHz
fT VCE= -10V, IE= 50mA,f=200MHz
2SB767-S
185-330
CS
1.Base
2.Collector
3.Emitter
Min Typ Max Unit
-80
-80
V
-5
-100
nA
-100
-0.2 -0.4
V
-0.85 -1.2
90
330
50 100
20 30 pF
120
MHz
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