2SB767 Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type(For low-frequency output amplification)

SMD Type
TransistIoCrs
Silicon PNP Epitaxial Planar Type
2SB767
Features
Large collector power dissipation PC
High collector-emitter voltage (Base open) VCEO
Mini type package, allowing downsizing of the equipment and automatic
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
-80
V
VCEO
-80
V
VEBO
-5
V
IC
-1
A
ICP
-0.5
A
PC
1
W
Tj
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Collector-base cutoff current
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Testconditons
ICBO VCB = -20 V, IE = 0
VCBO IC = -10ìA, IE = 0
VCEO IC = -100ìA, IB = 0
VEBO IE = -10 ìA, IC = 0
hFE VCE = -10 V, IC = -150 mA
VCE(sat) IC = -300 mA, IB = -30 mA
VBE(sat) IC = -300 mA, IB = -30 mA
fT VCB = -10 V, IE = 50 mA, f = 200 MHz
Cob VCB = -10 V, IE = 0, f = 1 MHz
Min Typ Max Unit
-0.1 ìA
-80
V
-80
V
-5
V
90
220
-0.2 -0.4 V
0.85 -1.2 V
120
MHz
20 30 pF
hFE Classification
Marking
hFE
CQ
90 155
CR
130 220
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