2SB766-HF_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SB766-HF
Transistors
■ Features
● Large collector power dissipation PC
● Complimentary to 2SD874-HF
● Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
1.70 0.1
0.42 0.1
0.46 0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
Collector Power Dissipation
Junction Temperature
Storage Temperature range
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Rating
Unit
VCBO
-30
VCEO
-25
V
VEBO
-5
IC
-1
A
ICP
-1.5
PC
1
W
TJ
150
℃
Tstg
-55 to 150
Symbol
Test Conditions
VCBO Ic= -100 μA， IE=0
VCEO Ic= -2 mA， IB=0
VEBO IE= -100μA， IC=0
ICBO VCB= -20 V , IE=0
IEBO VEB= -4V , IC=0
VCE(sat) IC=-500 mA, IB=-50mA
VBE(sat) IC=-500 mA, IB=-50mA
hFE(1) VCE= -10V, IC= -500mA
hFE(2) VCE=- 5V, IC= -1A
Cob VCB= -10V, IE= 0,f=1MHz
fT VCE= -10V, IC= -50mA,f=200MHz
■ Classification of hfe(1)
Type
2SB766-Q-HF
Range
85-170
Marking
AQ F
2SB766-R-HF
120-240
AR F
2SB766-S-HF
170-340
AS F
1.Base
2.Collector
3.Emitter
Min Typ Max Unit
-30
-25
V
-5
-100
nA
-100
-0.2 -0.4
V
-0.85 -1.2
85
340
50
20 30 pF
200
MHz
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