2SB736A_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SB736A
Transistors
■ Features
● High DC current gain hFE:200(TYP)
● Complimentary to 2SD780A.
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.1
Unit: mm
0.1 ^+0.05
-0.01
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
Rating
Unit
VCBO
-80
VCEO
-80
V
VEBO
-5
IC
-300
mA
PC
200
mW
TJ
150
℃
Tstg
-55 to 150
1.Base
2.Emitter
3.collector
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage (Note.1)
Base - emitter saturation voltage (Note.1)
Base - emitter voltage (Note.1)
DC current gain (Note.1)
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -100 μA， IE=0
VCEO Ic= -1 mA， IB=0
VEBO IE= -100μA， IC=0
ICBO VCB= - 70V , IE=0
IEBO VEB= -5V , IC=0
VCE(sat) IC=-300 mA, IB=-30mA
VBE(sat) IC=-300 mA, IB=-30mA
VBE VCE= -6V, IC= -10mA
VCE= -1 V, IC= -50mA
hFE
VCE= -2V, IC= -300mA
Cob VCB= -6V, IE= 0,f=1MHz
fT
VCE= -6V, IE= 10mA
Min Typ Max
-80
-80
-5
-0.1
-0.1
-0.35 -0.6
-1.2
-600 -660 -700
110 200 400
30
13
100
Unit
V
uA
V
mV
pF
MHz
Note.1:Pulse test : Pulse width ≤350μs,Duty Cycle≤2%.
■ Classification of hfe(1)
Type
Range
Marking
2SB736A-B51
110-180
B51
2SB736A-B52
135-220
B52
2SB736A-B53
170-270
B53
2SB736A-B54
200-320
B54
2SB736A-B55
250-400
B55
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