2SB736A Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Silicon Epitaxial Transistor

SMD Type
TransistIoCrs
PNP Silicon Epitaxial Transistor
2SB736A
Features
Micro package.
Complementary to 2SD780A.
High DC Current Gain: hFE = 200 TYP. (VCE = -1.0 V, IC = -50 mA)
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Total power dissipation
Junction temperature
Storage temperature range
Symbol
Rating
Unit
VCBO
-80
V
VCEO
-80
V
VEBO
-5.0
V
IC
-300
mA
PT
200
mW
Tj
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Base to emitter voltage *
Collector saturation voltage *
Output capacitance
Gain bandwidth product
* Pulsed: PW 350 µs, duty cycle 2%
Symbol
Testconditons
ICBO VCB = -50 V, IE = 0
IEBO VEB = -5.0 V, IC = 0
hFE VCE = -1.0 V, IC = -50 mA
VBE VCE = 6.0 V, IC = -10 mA
VCE(sat) IC = -300 mA, IB = -30 mA
Cob VCB = -6.0 V, IE = 0 , f = 1.0 MHz
fT VCE = -6.0 V, IE = 10 mA
1.Base
2.Emitter
3.collector
Min Typ
110
-600 -660
-0.35
13
100
Max
-100
-100
400
-700
-0.6
Unit
nA
nA
mV
V
pF
MHz
hFE Classification
Marking
hFE
B51
110 180
B52
135 220
B53
170 270
B54
200 320
B55
250 400
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