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2SB736-HF_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors | |||
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SMD Type
PNP Transistors
2SB736-HF
Transistors
â Features
â High DC current gain hFE:200(TYP)
â Complimentary to 2SD780-HF
â PbâFree Package May be Available. The GâSuffix Denotes a
PbâFree Lead Finish
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 +0.1
-0.1
Unit: mm
0.1 +0.05
-0.01
â Absolute Maximum Ratings Ta = 25â
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
Rating
Unit
VCBO
-60
VCEO
-60
V
VEBO
-5
IC
-300
mA
PC
200
mW
TJ
150
â
Tstg
-55 to 150
1.Base
2.Emitter
3.collector
â Electrical Characteristics Ta = 25â
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage (Note.1)
Base - emitter saturation voltage (Note.1)
Base - emitter voltage (Note.1)
DC current gain (Note.1)
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -100 μAï¼ IE=0
VCEO Ic= -1 mAï¼ IB=0
VEBO IE= -100μAï¼ IC=0
ICBO VCB= - 50V , IE=0
IEBO VEB= -5V , IC=0
VCE(sat) IC=-300 mA, IB=-30mA
VBE(sat) IC=-300 mA, IB=-30mA
VBE VCE= -6V, IC= -10mA
VCE= -1 V, IC= -50mA
hFE
VCE= -2V, IC= -300mA
Cob VCB= -6V, IE= 0,f=1MHz
fT
VCE= -6V, IE= 10mA
Min Typ Max
-60
-60
-5
-0.1
-0.1
-0.35 -0.6
-1.2
-600 -660 -700
110 200 400
30
13
100
Unit
V
uA
V
mV
pF
MHz
Note.1:Pulse test : Pulse width â¤350μs,Duty Cycleâ¤2%.
â Classification of hfe(1)
Type
Range
Marking
2SB736-BW1-HF
110-180
BW1 F
2SB736-BW2-HF
135-220
BW2 F
2SB736-BW3-HF
170-270
BW3 F
2SB736-BW4-HF
200-320
BW4 F
2SB736-BW5-HF
250-400
BW5 F
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