2SB710A Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – Silicon PNP Epitaxial Planar Type

SMD Type
TransistIoCrs
Silicon PNP Epitaxial Planar Type
2SB710A
Features
Large collector current IC.
Mini type package, allowing downsizing of the equipment and automatic
insertion through the tape packing and the magazine packing.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Electrical Characteristics Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector-base cutoff current
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Rating
Unit
VCBO
-60
V
VCEO
-50
V
VEBO
-5
V
IC
-0.5
A
ICP
-1
A
PC
200
mW
Tj
150
Tstg
-55 to +150
1.Base
2.Emitter
3.collector
Symbol
Testconditons
VCBO IC = -10 ìA, IE = 0
VCEO IC = -10 mA, IB = 0
VEBO IE = -10 ìA, IC = 0
ICBO VCB = -20 V, IE = 0
hFE VCE = -10 V, IC = -150 mA
VCE(sat) IC = -300 mA, IB = -30 mA
VBE(sat) IC = -300 mA, IB = -30 mA
fT VCB = -10 V, IE = 50 mA , f = 200 MHz
Cob VCB = -10V , IE = 0 , f = 1.0MHz
Min Typ Max Unit
-60
V
-50
V
-5
V
-0.1 µA
85
340
-0.35 -0.6 V
-1.1 -1.5 V
200
MHz
6 15 pF
hFE Classification
Marking
hFE
DQ
85 170
DR
120 240
DS
170 340
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