2SB624_15 Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SB624
Transistors
■ Features
● High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA)
● Complimentary to 2SD596.
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.1
Unit: mm
0.1 ^+0.05
-0.01
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
Rating
Unit
VCBO
-30
VCEO
-25
V
VEBO
-5
IC
-700
mA
PC
200
mW
TJ
150
℃
Tstg
-55 to 150
1.Base
2.Emitter
3.collector
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Collector- base breakdown voltage
VCBO Ic= -100 μA， IE=0
Collector- emitter breakdown voltage
VCEO Ic= -1 mA， IB=0
Emitter - base breakdown voltage
VEBO IE= -100μA， IC=0
Collector-base cut-off current
ICBO VCB= -30 V , IE=0
Emitter cut-off current
IEBO VEB= -5V , IC=0
Collector-emitter saturation voltage (Note.1)
VCE(sat) IC=-700 mA, IB=-70mA
Base - emitter saturation voltage (Note.1)
VBE(sat) IC=-700 mA, IB=-70mA
Base - emitter voltage (Note.1)
VBE VCE= -6V, IC= -10mA
DC current gain (Note.1)
hFE(1)
hFE(2)
VCE= -1V, IC= -100mA
VCE=- 1V, IC= -700mA
Collector output capacitance
Cob VCB= -6V, IE= 0,f=1MHz
Transition frequency
fT
VCE= -6V, IC= -10mA
Note.1:Pulse test : Pulse width ≤350μs,Duty Cycle≤2%.
■ Classification of hfe(1)
Min Typ Max Unit
-30
-25
V
-5
-100
nA
-100
-0.6
-1.2 V
-0.6
-0.7
110
400
50
17
pF
160
MHz
Type
Range
Marking
2SB624-BV1
110-180
BV1
2SB624-BV2
135-220
BV2
2SB624-BV3
170-270
BV3
2SB624-BV4 2SB624-BV5
200-320
250-400
BV4
BV5
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