2SB1643_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SB1643
Transistors
■ Features
● High collector to emitter VCEO
● High collector power dissipation PC
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30 +0.1
-0.1
0.50 +0.8
-0.7
0.80+0.1
-0.1
0.127
m ax
Unit: mm
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector current
Collector Current - Pulse
Base current
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Tc = 25℃
Ta = 25℃
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
TJ
Tstg
2.3
4 .60 ^+0.15
-0.15
0.60+ 0.1
- 0.1
Rating
Unit
-60
-60
V
-6
-3
-6
A
-1
40
W
1.3
150
℃
-55 to 150
1 Base
2 Collector
3 Emitter
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Collector-emitter cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Transition frequency
Symbol
Test Conditions
VCBO Ic= -100 uA， IE=0
VCEO Ic= -1 mA, IB=0
VEBO IE= -100 uA， IC=0
ICBO VCB= -60V , IE=0
ICEO VCE= -40V , IB=0
IEBO VEB= -6V , IC=0
VCE(sat) IC=-2 A, IB=-50 mA
VBE(sat) IC=-2 A, IB=-50 mA
hFE VCE= -4V, IC= -500 mA
fT VCE= -12V, IC= -200 mA,f=10MHz
■ Classification of hfe
Type
Range
2SB1643-Q
300-500
2SB1643-P
400-700
Min Typ Max Unit
-60
-60
V
-6
-0.1
-10 uA
-0.1
-1
V
-1.2
300
700
30
MHz
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