2SB1643 Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type(For power amplification)

SMD Type
Transistors
Silicon PNP Epitaxial Planar Type
2SB1643
Features
High collector to emitter VCEO.
High collector power dissipation PC.
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
2.3
4.60^+0.15
-0.15
0.60+0.1
-0.1
1 Base
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Peak collector current
Base current
Collector power dissipation TC = 25
Ta = 25
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
-60
V
VCEO
-60
V
VEBO
-6
V
IC
-3
A
ICP
-6
A
IB
-1
A
40
W
PC
1.3
W
Tj
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Collector-base cutoff curent
Collector-emitter cutoff curent
Emitter-base cutoff current
Collector-emitter voltage
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Symbol
Testconditons
ICBO VCB = -60 V,IE = 0
ICEO VEB = -40 V,IC = 0
IEBO VEB = -6 V, IC = 0
VCEO IC = -25 mA, IB = 0
hFE VCE = -4 V, IC = -0.5 A
VCE(sat) IC = -2 A, IB = -0.05 A
fT VCE = -12 V, IC = -0.2 A , f = 10 MHz
Min Typ Max Unit
-100 ìA
-100 ìA
-100 ìA
-60
V
300
700
-1 V
30
MHz
hFE Classification
Rank
hFE
Q
300 500
P
400 700
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