2SB1628_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SB1628
Transistors
■ Features
● High current capacitance
● Low collector saturation voltage
1.70 0.1
0.42 0.1
0.46 0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Collector - Base Voltage
Collector - Emitter Voltage
VCBO
-20
VCEO
-16
V
Emitter - Base Voltage
VEBO
-6
Collector Current - Continuous
Collector Current - Pulse
IC
-3
A
ICP
-5
Collector Power Dissipation
PC
2
W
Junction Temperature
Storage Temperature range
■ Electrical Characteristics Ta = 25℃
TJ
150
℃
Tstg
-55 to 150
Parameter
Symbol
Test Conditions
Collector- base breakdown voltage
VCBO Ic= -100 μA， IE=0
Collector- emitter breakdown voltage
VCEO Ic= -1 mA， IB=0
Emitter - base breakdown voltage
VEBO IE= -100μA， IC=0
Collector-base cut-off current
ICBO VCB= -20 V , IE=0
Emitter cut-off current
IEBO VEB= -6V , IC=0
Collector-emitter saturation voltage
IC=-2 A, IB=-100mA
VCE(sat)
IC=-3 A, IB=-150mA
Base - emitter saturation voltage
VBE(sat) IC=-2 A, IB=-100mA
Base - emitter voltage
VBE VCE= -2V, IC= -50mA
DC current gain
hFE(1)
hFE(2)
VCE= -2V, IC= -500mA
VCE=- 2V, IC= -3 A
Turn-on time
Storage time
Fall time
ton
IC = −1.0 A, VCC = −10 V
tstg IB1 = −IB2 = −0.1 A
tf
RL = 10 Ω
Collector output capacitance
Cob VCB= -10V, IE= 0,f=1MHz
Transition frequency
■ Classification of hfe(1)
fT
VCE= -3V, IE= 500mA
Type
2SB1628-X 2SB1628-Y 2SB1628-Z
Range
140-280
200-400
280-560
Marking
ZX
ZY
ZZ
1.Base
2.Collector
3.Emitter
Min Typ Max Unit
-20
-16
V
-6
-100
nA
-100
-0.35
-0.55
V
-1.2
-0.6
-0.7
140
560
70
70
110
ns
40
45
pF
320
MHz
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