2SB1628 Datasheet, PDF (1/2 Pages) NEC – PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING

SMD Type
Transistors
PNP Silicon Epitaxial Transistor
2SB1628
Features
High current capacitance.
Low collector saturation voltage.
Absolute Maximum Ratings Ta = 25
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
Collector Current (pulse) *
Base Current (DC)
Base Current (pulse) *
Total Power Dissipation
Junction Temperature
Storage temperature
* PW 10 ms, Duty Cycle 50%
Symbol
Rating
Unit
VCBO
-20
V
VCEO
-16
V
VEBO
-6
V
IC(DC)
-3
A
Ic(Pulse)
-5
A
IB(DC)
-0.2
A
IB(Pulse)
-0.4
A
PT
2
W
Tj
150
Tstg
-55 to +150
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