2SB1599_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SB1599
Transistors
■ Features
● Low collector to emitter saturation voltage VCE(sat).
● Complementary to 2SD2457
1.70 0.1
0.42 0.1
0.46 0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Base Current
Collector Current - Pulse
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
Rating
Unit
VCBO
-50
VCEO
-40
V
VEBO
-5
IB
-0.6
A
ICP
-3
PC
1
W
TJ
150
℃
Tstg
-55 to 150
1.Base
2.Collector
3.Emitter
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Collector-emitter cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -1 mA， IE=0
VCEO Ic= -10 mA, IB=0
VEBO IE= -1 mA， IC=0
ICBO VCB= -50V , IE=0
ICEO VCE= -40V , IB=0
IEBO VEB= -5V , IC=0
VCE(sat) IC=-1.5 A, IB=-150 mA
VBE(sat) IC=-2 A, IB=-200 mA
hFE VCE= -5V, IC= -1 A
Cob VCB= -5V, IE= 0,f=1MHz
fT
VCE= -5V, IE= 500 mA,f=200MHz
■ Classification of hfe
Type
Range
Marking
2SB1599-P
50-100
1XP
2SB1599-Q
80-160
1XQ
2SB1599-R
100-220
1XR
Min Typ Max Unit
-50
-40
V
-5
-1
-10 uA
-0.1
-0.4 -1
V
-1.5
50
220
70
pF
150
MHz
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