2SB1599 Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type(For power amplification)

SMD Type
Transistors
Silicon PNP Epitaxial Planar Type
2SB1599
Features
Low collector to emitter saturation voltage VCE(sat).
Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the magazine
packing.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
-50
V
VCEO
-40
V
VEBO
-5
V
ICP
-3
A
IC
-0.6
A
PC
1
W
Tj
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
Collector-base voltage
Collector-emitter voltage
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Testconditons
ICBO VCB= -20 V, IE = 0
ICEO VCE= -12 V, IB = 0
IEBO VEB= -5 V, IC = 0
VCBO IC = -1 mA, IE = 0
VCEO IC = -10 mA, IB = 0
hFE VCE = -5 V, IC = -1A
VCE(sat) IC = -1.5A, IB = - 0.15A
VBE(sat) IC = -2A, IB = - 0.2A
fT VCB = -5 V, IE = 0.5 A, f = 200 MHz
Cob VCB = -5V, IE = 0, f = 1 MHz
hFE Classification
Marking
Rank
hFE
P
50 100
1X
Q
80 160
R
100 220
Min Typ Max Unit
-1 ìA
-100 ìA
-100 ìA
-50
V
-40
V
50
220
-0.4 -1 V
-1.5 V
150
MHz
70
pF
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