2SB1589_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SB1589
Transistors
■ Features
● Low collector to emitter saturation voltage VCE(sat).
● Large collector power dissipation PC.
● For low-frequency output amplification
1.70 0.1
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
Rating
Unit
VCBO
-10
VCEO
-10
V
VEBO
-7
IC
-1.5
A
ICP
-2
PC
1
W
TJ
150
℃
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Forward voltage
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -100 uA， IE=0
VCEO Ic= -1 mA, IB=0
VEBO IE= -100 uA， IC=0
ICBO VCB= -7V , IE=0
IEBO VEB= -6V , IC=0
VCE(sat) IC=-1 A, IB=-25 mA
VBE(sat) IC=-1 A, IB=-25 mA
hFE VCE= -1V, IC= -400 mA
VF IF = –500mA
Cob VCB= -10V, IE= 0,f=1MHz
fT VCE= -6V, IE= 50 mA,f=200MHz
■ Marking
Marking
1U
Min Typ Max Unit
-10
-10
V
-7
-1
uA
-0.1
-0.24 -0.35
V
-1.2
200
700
-1.3 V
65
pF
190
MHz
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