2SB1574_15 Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SB1574
Transistors
■ Features
● Collector breakdown voltage: VCBO/VCEO = –50V
● Collector current: IC = –2A
● For low-frequency output amplification
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30 +0.1
-0.1
0.50 +0.8
-0.7
0.80+0.1
-0.1
0.127
m ax
Unit: mm
2.3
4 .60 ^+0.15
-0.15
0.60+ 0.1
- 0.1
1 Base
2 Collector
3 Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Collector - Base Voltage
Collector - Emitter Voltage
VCBO
-50
VCEO
-50
V
Emitter - Base Voltage
VEBO
-5
Collector Current - Continuous
Collector Current - Pulse
IC
-2
A
ICP
-3
Collector Power Dissipation
PC
10
W
Junction Temperature
Storage Temperature range
TJ
150
℃
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -100 uA， IE=0
VCEO Ic= -1 mA, IB=0
VEBO IE= -100 uA， IC=0
ICBO VCB= -50V , IE=0
IEBO VEB= -5V , IC=0
VCE(sat) IC=-1 A, IB=-50 mA
VBE(sat) IC=-1 A, IB=-50 mA
VCE= -2V, IC= -200 mA
hFE
VCE= -2V, IC= -1 A
Cob VCB= -10V, IE= 0,f=1MHz
fT
VCE= -10V, IE= 50 mA,f=200MHz
■ Classification of hfe(1)
Type
Range
2SB1574-R
120-240
2SB1574-S
170-340
Min Typ Max Unit
-50
-50
V
-5
-0.1
uA
-0.1
-0.2 -0.3
V
-0.85 -1.2
120
340
60
45 60 pF
80
MHz
www.kexin.com.cn ¹