2SB1572_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SB1572
Transistors
■ Features
● Low collector-emitter saturation voltage
● Complementary to 2SD2403
1.70 0.1
0.42 0.1
0.46 0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Collector - Base Voltage
VCBO
-80
Collector - Emitter Voltage
VCEO
-60
Emitter - Base Voltage
VEBO
-6
Collector Current - Continuous
IC
-3
Collector Current - Pulse
ICP
-5
Collector Power Dissipation
PC
2
Junction Temperature
TJ
150
Storage Temperature range
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Collector- base breakdown voltage
VCBO Ic= -100 uA， IE=0
Collector- emitter breakdown voltage
VCEO Ic= -1 mA, IB=0
Emitter - base breakdown voltage
VEBO IE= -100 uA， IC=0
Collector-base cut-off current
ICBO VCB= -80V , IE=0
Emitter cut-off current
IEBO VEB= -6V , IC=0
Collector-emitter saturation voltage
IC=-2 A, IB=-100 mA
VCE(sat)
IC=-3 A, IB=-150 mA
Base - emitter saturation voltage
VBE(sat) IC=-2 A, IB=-100 mA
Base - emitter voltage
VBE VCE= -2V, IC= -100 mA
DC current gain
VCE= -2V, IC= -100 mA
hFE
VCE= -2V, IC= -1 A
Turn-on Time
Storage Time
Fall Time
ton
tstg
IC = −1 A, VCC = −10 V,
RL = 5.0 Ω, IB1 = −IB2 = −0.1 A,
tf
Collector output capacitance
Cob VCB= -10V, IE= 0,f=1MHz
Transition frequency
fT
VCE= -10V, IE= 300 mA
■ Classification of hfe(2)
Type
2SB1572-X
2SB1572-Y
2SB1572-Z
Range
100-200
160-320
200-400
Marking
HX
HY
HZ
1.Base
2.Collector
3.Emitter
Unit
V
A
W
℃
Min Typ Max
-80
-60
-6
-0.1
-0.1
-0.2 -0.4
-0.3 -0.6
-0.89 -1.2
-0.63
-0.73
80
100 200 400
155
510
35
45
160
Unit
V
uA
V
ns
pF
MHz
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