2SB1527_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
Transistors
PNP Transistors
2SB1527
■ Features
● Large current capatance
● Low collector-emitter saturation voltage
● Contains a bias resisror between base and emitter
Collector
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.1
Unit: mm
0.1 ^+0.05
-0.01
Base
■ Absolute Maximum Ratings Ta = 25℃
RBE
Emitter
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
Rating
Unit
VCBO
-20
VCEO
-15
V
VEBO
-5
IC
-0.8
A
ICP
-2
PC
200
mW
TJ
150
℃
Tstg
-55 to 150
1.Base
2.Emitter
3.collector
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Diode forward voltage
Base - emitter resistance
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -100 uA， IE=0
VCEO Ic= -10 mA, RBE=∞
VEBO IE= -100 uA， IC=0
ICBO VCB= -15V , IE=0
IEBO VEB= -5V , IC=0
VCE(sat) IC=-500 mA, IB=-10 mA
VBE(sat) IC=-500 mA, IB=-10 mA
hFE VCE= -2V, IC= -500 mA
VF IF=0.5A
RBE
Cob VCB= -10V, IE= 0,f=1MHz
fT
VCE= -2V, IC= -500 mA
Min Typ Max Unit
-20
-15
V
-5
-1
uA
-0.1
-0.2 -0.4
V
-0.95 -1.3
70
-1.5 V
1
kΩ
30
pF
250
MHz
■ Marking
Marking
NS
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