2SB1475_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SB1475
Transistors
■ Features
● Super Miniature Package
● Low collector-emitter saturation voltage
● High DC Current
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Rating
-25
-16
-6
-0.5
150
150
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base - emitter voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -100 uA， IE=0
VCEO Ic= -1 mA, IB=0
VEBO IE= -100 uA， IC=0
ICBO VCB= -25V , IE=0
IEBO VEB= -6V , IC=0
IC=-100 mA, IB=-10 mA
VCE(sat)
IC=-500 mA, IB=-20 mA
VBE(sat) IC=-2 A, IB=-100 mA
VBE VCE= -1V, IC= -10 mA
VCE= -1V, IC= -100 mA
hFE
VCE= -1V, IC= -500 mA
Cob VCB= -10V, IE= 0,f=1MHz
fT
VCE= -3V, IE= 100 mA
■ Classification of hfe(1)
Type
2SB1427-B42
Range
110-240
Marking
B42
2SB1427-B43
190-320
B43
2SB1427-B44
270-400
B44
1 Base
2 Emitter
3 Collector
Unit
V
A
mW
℃
Min Typ Max Unit
-25
-16
V
-6
-0.1
uA
-0.1
-0.12
-0.25 -0.4
V
-0.95 -1.2
-0.6
-0.7
110
400
100
15 pF
50
MHz
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