2SB1443 Datasheet, PDF (1/1 Pages) Rohm – Power Transistor (-50V, -2A)

SMD Type
Power Transistor
2SB1443
Features
Low saturation voltage. VCE (sat) = -0.35V (Max.) at IC / IB = -1A / -50mA.
Excellent DC current gain characteristics.
TransistIoCrs
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
-50
V
VCEO
-50
V
VEBO
-6
V
IC
-2
A
ICP *1
-5
A
PC*2
1
W
Tj
150
Tstg
-55 to +150
*1 Single pulse Pw=10ms.
*2 Printed circuit board 1.7mm thick, collector plating 1cm² or larger.
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltae
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Output capacitance
Transition frequency
Symbol
Testconditons
VCBO IC= -50ìA
VCEO IC= -1mA
VEBO IE= -50ìA
IcBO VCB= -50V
IEBO VEB= -5V
hFE VCE=-2V, IC= -0.5A
VCE(sat) IC/IB= -1A/ -50mA
Cob VCB= -10V, IE=0A, f=1MHz
fT VCE= -2V, IE=0.5A, f=100MHz
Min Typ Max Unit
-50
V
-50
V
-6
V
-0.1
A
-0.1
A
120
270
-0.15 -0.35 V
36
pF
200
MHz
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