2SB1440 Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type(For low-frequency output amplification)

SMD Type
Transistors
Silicon PNP Epitaxial Planar Type
2SB1440
Features
Low collector to emitter saturation voltage VCE(sat).
Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the magazine
packing.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Electrical Characteristics Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Rating
Unit
VCBO
-50
V
VCEO
-50
V
VEBO
-5
V
ICP
-3
A
IC
-2
A
PC
1
W
Tj
150
Tstg
-55 to +150
Symbol
Testconditons
VCBO IC = -10 ìA, IE = 0
VCEO IC = -1 mA, IB = 0
VEBO IE = -10 ìA, IC = 0
hFE VCE = -2 V, IC = -200 mA
VCE(sat) IC = -1 A, IB = - 50 mA
VBE(sat) IC = -1 A, IB = - 50 mA
fT VCB = -10 V, IE = 50 mA, f = 200 MHz
Cob VCB = -10 V, IE = 0, f = 1 MHz
Min Typ Max Unit
-50
V
-50
V
-5
V
120
340
-0.2 -0.3 V
-0.85 -1.2
80
MHz
45 60 pF
hFE Classification
Marking
Rank
hFE
1I
R
S
120 240 170 340
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