2SB1427_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SB1427
Transistors
■ Features
● Low saturation voltage,
● Excellent DC current gain characteristics.
1.70 0.1
0.42 0.1
0.46 0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
Rating
Unit
VCBO
-20
VCEO
-20
V
VEBO
-6
IC
-2
A
ICP
-3
0.5
PC
W
2
TJ
150
℃
Tstg
-55 to 150
1.Base
2.Collector
3.Emitter
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -100 uA， IE=0
VCEO Ic= -1 mA, IB=0
VEBO IE= -100 uA， IC=0
ICBO VCB= -16V , IE=0
IEBO VEB= -5V , IC=0
VCE(sat) IC=-1 A, IB=-50 mA
VBE(sat) IC=-1 A, IB=-50 mA
hFE VCE= -6V, IC= -500 mA
Cob VCB= -10V, IE= 0,f=1MHz
fT VCE= -10V, IE= 10 mA,f=100MHz
Min Typ Max Unit
-20
-20
V
-6
-0.5
uA
-0.5
-0.5
V
-1.2
390
820
30
pF
90
MHz
■ Marking
Marking
BJ *
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