2SB1424_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SB1424
Transistors
■ Features
● Excellent DC current gain
● Low collector-emitter saturation voltage
● Complementary to 2SD2150
1.70 0.1
0.42 0.1
0.46 0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature range
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
TJ
Tstg
Rating
-20
-20
-6
-3
500
250
150
-55 to 150
Unit
V
A
mW
℃/W
℃
1.Base
2.Collector
3.Emitter
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Symbol
Test Conditions
VCBO Ic= -100 uA， IE=0
VCEO Ic= -1 mA, IB=0
VEBO IE= -100 uA， IC=0
ICBO VCB= -20V , IE=0
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
IEBO
VCE(sat)
VBE(sat)
hFE
VEB= -5V , IC=0
IC=-2 A, IB=-100 mA
IC=-2 A, IB=-100 mA
VCE= -2V, IC= -100 mA
Collector output capacitance
Cob VCB= -10V, IE= 0,f=1MHz
Transition frequency
fT
VCE= -2V, IC= -500 mA,f=100MHz
Min Typ Max Unit
-20
-20
V
-6
-0.1
uA
-0.1
-0.5
V
-1.2
120
390
35
pF
240
MHz
■ Classification of hfe
Type
2SB1424-Q
Range
120-270
Marking
AEQ
2SB1424-R
180-390
AER
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