2SB1407S_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SB1407S
Transistors
■ Features
● Low frequency power amplifier
● Complementary to 2SD2121
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30 +0.1
-0.1
0.50 +0.8
-0.7
0.80+0.1
-0.1
0.127
m ax
Unit: mm
2.3
4 .60 ^+0.15
-0.15
0.60+ 0.1
- 0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
Rating
Unit
VCBO
-35
VCEO
-35
V
VEBO
-5
IC
-2.5
A
ICP
-3
PC
18
W
TJ
150
℃
Tstg
-55 to 150
1 Base
2 Collector
3 Emitter
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base to emitter voltage
DC current gain
Symbol
Test Conditions
VCBO Ic= -1 mA， IE=0
VCEO Ic= -10 mA, RBE=∞
VEBO IE= -1 mA， IC=0
ICBO VCB= -35V , IE=0
IEBO VEB= -5V , IC=0
VCE(sat) IC=-2 A, IB=-200 mA
VBE(sat) IC=-2 A, IB=-200 mA
VBE VCE= -2V, IC= -1.5 A
VCE= -2V, IC= -500 mA
hFE
VCE= -2V, IC= -1.5 A
■ Classification of hfe(1)
Type
Range
2SB1407S-B
60-120
2SB1407S-C
100-200
2SB1407S-D
160-320
Min Typ Max Unit
-35
-35
V
-5
-20
uA
-0.1
-1
-1.2 V
-1.5
60
320
20
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