2SB1397_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SB1397
Transistors
■ Features
● Low collector to emitter saturation voltage
● Large current capacity
● Complementary to 2SD2100
Collector
1.70 0.1
0.42 0.1
0.46 0.1
Base
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
Collector Power Dissipation
Junction Temperature
Storage Temperature range
RBE
Emitter
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
TJ
Tstg
Rating
-25
-20
-6
-2
-4
1.3
150
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Base to emitter resistance
Diode forward voltage
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -100 uA， IE=0
VCEO Ic= -10 mA, RBE=∞
VEBO IE= -100 uA， IC=0
ICBO VCB= -20V , IE=0
IEBO VEB= -5V , IC=0
VCE(sat) IC=-1 A, IB=-50 mA
VBE(sat) IC=-1 A, IB=-50 mA
VCE= -2V, IC= -500 mA
hFE
VCE= -2V, IC= -2 A
RBE
VF
Cob VCB= -10V, IE= 0,f=1MHz
fT
VCE= -2V, IC= -500 mA
■ Marking
Marking
BP
1.Base
2.Collector
3.Emitter
Unit
V
A
W
℃
Min Typ Max Unit
-25
-20
V
-6
-1
uA
-0.1
-0.25 -0.5
V
-1.5
70
50
1.6 kΩ
-1.5 V
40
pF
300
MHz
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