2SB1397 Datasheet, PDF (1/1 Pages) Sanyo Semicon Device – Compact Motor Driver Applications

SMD Type
Transistors
PNP Epitaxial Planar Silicon Transistors
2SB1397
Features
Low saturation voltage.
Contains diode between collector and emitter.
Contains bias resistance between base and emitter.
Large current capacity.
Small-sized package making it easy to provide highdensity,
small-sized hybrid ICs.
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
-25
V
Collector-emitter voltage
VCEO
-20
V
Emitter-base voltage
VEBO
-6
V
Collector current
IC
-2
A
Collector current (pulse)
ICP
-4
A
Collector dissipation
PC *
1.3
W
Jumction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
* Mounted on ceramic board (250mm²X0.8mm)
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
DC current Gain
Gain bandwidth product
Output capacitance
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-to-base breakdown voltage
Collector-to-emitter breakdown voltage
Collector-to-emitter breakdown voltage
Diode forward voltage
Base-emitter resistance
Symbol
Testconditons
ICBO
VCB = -20V , IE = 0
VCE = -2V , IC = -0.5A
hFE
VCE = -2V , IC = -2A
fT
VCE = -2V , IC = -0.5A
Cob
VCB = -10V , f = 1MHz
VCE(sat) IC = -1A , IB = -50mA
VBE(sat) IC = -1A , IB = -50mA
V(BR)CBO IC = -10ìA , IE = 0
V(BR)CEO1 IC = -10ìA , RBE =
V(BR)CEO2 IC = -10mA , RBE =
VF
IF=0.5A
RBE
Min Typ Max Unit
-1 nA
70
50
300
MHz
40
pF
-0.25 -0.5 V
-1.5 V
-25
V
-25
V
-20
-1.5 V
1.6
KÙ
Marking
Marking
BP
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